Sealing film and a semiconductor device using the same

ABSTRACT

A sealing film which includes a resin layer having a flow within the range of 150 to 1800 μm at 80° C., or having a resin layer with a viscosity within the range of 10000 to 100000 Pa·s in a B-stage state at 50 to 100° C. in thermosetting viscoelasticity measurement, and containing: (A) both (a1) a high-molecular-weight component including crosslinking functional groups and having a weight-average molecular weight of 100,000 or more and a Tg within the range of −50 to 50° C., and (a2) a thermosetting component including an epoxy resin as a main component, (B) a filler having an average particle size within the range of 1 to 30 μm, and (C) a colorant, as well as a manufacturing method thereof and a semiconductor device using the same.

TECHNICAL FIELD

The present invention relates to a sealing film excellent in fillingproperties and adhesiveness and a semiconductor device using the same.The present invention relates in particular to a sealing film which hasprotective functions and filling properties, which is used forprotecting and filling a semiconductor chip, and which is excellent infilling properties, adhesiveness and shape retention by regulatingfluidity at the time of filling, as well as a semiconductor device usingthe same.

BACKGROUND ART

Conventionally, downsizing and weight saving of electronics devices havebeen advancing, and with this advancement, there is demand forhigh-density package on substrates, and the downsizing, thinning andweight saving of semiconductor packages mounted on electronics devicesare progressing. Conventionally, there have been packages called LOC(Lead On Chip) and QFP (Quad Flat Package), and packages such as μBGA(Ball Grid Array) and CSP (Chip Size Package) that are smaller andlighter than the packages such as LOC and QFP have been developed.Face-down type packages that are a flip chip, WL-CSP (Wafer Level ChipSize Package) etc. wherein a circuit surface of a semiconductor elementis faced to the surface of a semiconductor interconnection substrate,have also been developed.

In the packages described above, sealed packages are obtained bytransfer-molding a solid epoxy resin sealing material, but it isdifficult to mold thin or large packages. When the content of inorganicfillers is increased, melt viscosity is generally increased at the timeof transfer molding, to cause problems such as an increase of residualvoids at the time of molding, of insufficient filling in a cavity, ofwire flow and of stage shift, and deteriorations in the qualities of amolded product.

In recent years, some of the flip chips, WL-CSP etc. have protrudedelectrodes, and for protecting such protrusions and filling a gapbetween the protrusions, a sealing material has sometimes been used, butit has been difficult to fill thereof with a solid epoxy resin sealingmaterial. Accordingly, a sealing film comprising an epoxy resin and aninorganic filler has been proposed (refer to, for example, JapanesePatent and 2005-60584).

DISCLOSURE OF INVENTION

However, when a conventional sealing film is used to seal, for example,a package having protruded electrodes or a package having a shaperestricted after sealing, it is difficult to regulate to fluidity, andfilling properties and adhesiveness cannot be satisfied in some cases.

An object of the present invention is to provide a sealing film whichhas protective functions and filling properties, which is used forprotecting and filling a semiconductor chip, and which is excellent infilling properties, adhesiveness and shape retention by regulatingfluidity at the time of filling, as well as a semiconductor device usingthe same.

The present invention is characterized by features described in thefollowing (1) to (13):

(1) A sealing film which comprises a resin layer containing thefollowing (A), (B) and (C) and having a flow within the range of 150 to1800 μm at 80° C.:

(A) a resin component containing (a1) a high-molecular-weight componentcomprising crosslinking functional groups and having a weight-averagemolecular weight of 100,000 or more and a Tg within the range of −50 to50° C. and (a2) a thermosetting component comprising an epoxy resin as amain component,

(B) a filler having an average particle size within the range of 1 to 30μm, and

(C) a colorant.

(2) A sealing film which comprises a resin layer containing thefollowing (A), (B) and (C) and having a viscosity within the range of10000 to 100000 Pa·s in a B-stage state at 50 to 100° C. inthermosetting viscoelasticity measurement:

(A) a resin component containing (a1) a high-molecular-weight componentcomprising crosslinking functional groups and having a weight-averagemolecular weight of 100,000 or more and a Tg within the range of −50 to50° C. and (a2) a thermosetting component comprising an epoxy resin as amain component,

(B) a filler having an average particle size within the range of 1 to 30μm, and

(C) a colorant.

(3) The sealing film according to the above-mentioned (1), whichcontains 1 to 300 parts by mass of the filler (B) and 0.01 to 10 partsby mass of the colorant (C), based on 10 parts by mass of the resincomponent (A) containing 5 to 85% by mass of the high-molecular-weightcomponent (a1) and 15 to 95% by mass of the thermosetting component(a2).

(4) The sealing film according to the above-mentioned (1) or (2),wherein the resin component (A) contains 5 to 80% by mass of thehigh-molecular-weight component (a1) and 15 to 85% by mass of thethermosetting component (a2).

(5) The sealing film according to the above-mentioned (4), whichcontains 1 to 300 parts by mass of the filler (B) and 0.01 to 10 partsby mass of the colorant (C), based on 10 parts by mass of the resincomponent (A).

(6) The sealing film according to any one of the above-mentioned (1) to(5), further comprising a substrate layer within the range of 5 to 300μm in thickness on one side of the resin layer, and the thickness of theresin layer is within the range of 5 to 800 μm.

(7) The sealing film according to any one of the above-mentioned (1) to(6), further comprising a substrate layer within the range of 5 to 300μm in thickness on one side of the resin layer and a protective layerwithin the range of 5 to 300 μm in thickness on the other side of theresin layer, and the thickness of the resin layer is within the range of5 to 800 μm.

(8) The sealing film according to any one of the above-mentioned (1) to(7), wherein the filler (B) is an inorganic filler.

(9) The sealing film according to any one of the above-mentioned (1) to(8), wherein the colorant (C) is a non-white colorant.

(10) The sealing film according to any one of the above-mentioned (1) to(9), wherein the storage elastic modulus of the resin layer at 35° C.after curing at 170° C. for 1 hour is within the range of 100 to 20000MPa.

(11) A semiconductor device using the sealing film according to any oneof the above-mentioned (1) to (10).

(12) A method for manufacturing a sealing film comprising a resin layerwith a flow within the range of 150 to 1800 μm at 80° C., which methodcomprises the steps of:

preparing a varnish by adding a solvent to a resin layer componentcontaining the following (A), (B) and (C):

(A) a resin component containing (a1) a high-molecular-weight componentcomprising crosslinking functional groups and having a weight-averagemolecular weight of 100,000 or more and a Tg within the range of −50 to50° C. and (a2) a thermosetting component comprising an epoxy resin as amain component,

(B) a filler having an average particle size within the range of 1 to 30μm, and

(C) a colorant,

applying the varnish onto a substrate layer or a substrate, and

drying the applied varnish at least once by heating at a temperaturewithin the range of 60 to 200° C. for 3 to 30 minutes.

(13) A method for manufacturing a sealing film comprising a resin layerhaving a viscosity within the range of 10000 to 100000 Pa·s in a B-stagestate at 50 to 100° C. in thermosetting viscoelasticity measurement,which method comprises the steps of:

preparing a varnish by adding a solvent to a resin layer componentcontaining the following (A), (B) and (C):

(A) a resin component containing (a1) a high-molecular-weight componentcomprising crosslinking functional groups and having a weight-averagemolecular weight of 100,000 or more and a Tg within the range of −50 to50° C. and (a2) a thermosetting component comprising an epoxy resin as amain component,

(B) a filler having an average particle size within the range of 1 to 30μm, and

(C) a colorant,

applying the varnish onto a substrate layer or a substrate, and

drying the applied varnish at least once by heating at a temperaturewithin the range of 60 to 200° C. for 3 to 30 minutes.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a schematic view of a sealing film comprising a substratelayer 1 and a resin layer 2.

FIG. 2 is a schematic view of a sealing film comprising a substratelayer 1, a resin layer 2 and a protective layer 3.

FIG. 3 is a schematic view of a step of laminating a sealing film on asemiconductor substrate.

FIG. 4 is a schematic view of a semiconductor element having protrudedelectrodes sealed with a sealing film.

BEST MODE FOR CARRYING OUT THE INVENTION

The resin layer constituting the sealing film of the present inventioncontains the following (A), (B) and (C) and has a flow within the rangeof 150 to 1800 μm at 80° C.:

(A) a resin component containing (a1) a high-molecular-weight componentcomprising crosslinking functional groups and having a weight-averagemolecular weight of 100,000 or more and a Tg within the range of −50 to50° C. and (a2) a thermosetting component comprising an epoxy resin as amain component,

(B) a filler having an average particle size within the range of 1 to 30μm, and

(C) a colorant.

The resin layer constituting the sealing film of the present inventioncontains the resin component (A), the filler (B) and the colorant (C)and has a viscosity within the range of 10000 to 100000 Pa·s in aB-stage state at 50 to 100° C. in thermosetting viscoelasticitymeasurement.

Hereinafter, the materials used in the present invention are described.

<High-Molecular-Weight Component (a1)>

The high-molecular-weight component (a1) comprising crosslinkingfunctional groups and having a weight-average molecular weight of100,000 or more and a Tg within the range of −50 to 50° C., constitutingthe resin component (A) used in the present invention, is notparticularly limited, and is preferably an epoxy group-comprising(meth)acrylic copolymer comprising a monomer having a crosslinkingfunctional groups as a structural unit. In the present invention,“(meth)acryl” refers to both “acryl” and “methacryl”. The crosslinkingfunctional group includes an acryl group, a methacryl group, anisocyanate group, a carboxyl group and the like.

As the epoxy group-comprising (meth)acrylic copolymer, it is possible touse, for example, an epoxy group-comprising (meth)acrylate copolymer, anepoxy group-comprising acrylic rubber or the like, among which an epoxygroup-comprising acrylic rubber is preferable. The acrylic rubber is arubber consisting primarily of an acrylate and consisting essentially ofa butyl acrylate/acrylonitrile copolymer, an ethylacrylate/acrylonitrile copolymer or the like. As the epoxygroup-comprising acrylic rubber having a weight-average molecular weightof 100,000 or more and a Tg within the range of −50 to 50° C., forexample, HHTR-860P-3DR or the like manufactured by Nagase ChemteXCorporation is commercially available.

As the epoxy group-comprising (meth)acrylic copolymer, a copolymerprepared by polymerizing an epoxy group-comprising monomer having acrosslinking functional group, such as glycidyl (meth)acrylate, can alsobe used, and a copolymer prepared by copolymerizing a monomer such asethyl (meth)acrylate and butyl (meth)acrylate with this epoxygroup-comprising monomer can also be used.

The amount of the epoxy group-comprising monomer in the epoxygroup-comprising (meth)acrylic copolymer is preferably 0.5 to 6.0% bymass, more preferably 0.5 to 5.0% by mass, still more preferably 0.8 to5.0% by mass. When the amount of the epoxy group-comprising monomer isin this range, adhesion force can be secured and gelation can beprevented. When the amount of the epoxy group-comprising monomer islower than 0.5% by mass, the adhesion of the resulting resin layer tendsto be decreased, while when the amount is higher than 6.0% by mass, thestorage stability of the resulting resin layer tends to be decreased.

When the above-mentioned monomer is polymerized to prepare thehigh-molecular-weight component (a1) having a weight-average molecularweight of 100,000 or more and a Tg within the range of −50 to 50° C.,the polymerization method is not particularly limited, and known methodssuch as pearl polymerization, solution polymerization etc. can be used.Polymerization conditions are not particularly limited either and may besuitably determined in consideration of the monomer used, concentrationthereof, the weight-average molecular weight of thehigh-molecular-weight component (a1), glass transition temperaturethereof and the like.

In the present invention, the weight-average molecular weight of thehigh-molecular-weight component (a1) is 100,000 or more, preferably300,000 to 3,000,000, more preferably 500,000 to 2,000,000. When theweight-average molecular weight is within this range, the strength,flexibility and tackiness of the resulting film are suitable, and theadhesiveness between the resin layer and an adherend can be secured. Inthe present invention, the weight-average molecular weight is measuredby gel permeation chromatography and determined using a standardpolystyrene calibration curve.

The glass transition temperature (referred to hereinafter as “Tg”) ofthe high-molecular-weight component (a1) is preferably within the rangeof −50° C. to 50° C., more preferably −40° C. to 50° C., still morepreferably −40° C. to 40° C. When the Tg is within the range of −50° C.to 50° C., the tackiness of the resin layer in a B-stage state issuitable and is not problematic for handleability.

The amount of the high-molecular-weight component (a1) incorporated ispreferably 5 to 85% by mass, more preferably 5 to 80% by mass, stillpreferably 10 to 80% by mass, most preferably 10 to 75% by mass, basedon the total amount of the resin component (A). When the amount of thehigh-molecular-weight component (a1) incorporated is lower than 5% byweight, the resulting resin layer tends to become brittle due toinsufficient flexibility, while when the amount is higher than 85% bymass, the fluidity of the resulting resin layer tends to be decreased.

<Thermosetting Component (a2)>

The thermosetting component (a2) constituting the resin component (A)used in the present invention is not particularly limited insofar as itis thermally set to exhibit an adhesive action, and the thermosettingcomponent (a2) preferably comprises an epoxy resin as main component.Examples of the epoxy resin that can be used include, for example, abifunctional epoxy resin such as a bisphenol A epoxy resin and a novolacepoxy resin such as a phenol novolac epoxy resin and a cresol novolacepoxy resin. In addition, generally known resins such as amultifunctional epoxy resin, a glycidyl amine epoxy resin, aheterocycle-containing epoxy resin and an alicyclic epoxy resin can beused.

The bisphenol A epoxy resin includes Epikote 807, 815, 825, 827, 828,834, 1001, 1004, 1007 and 1009 manufactured by Yuka Shell Epoxy Co.,Ltd., DER-330, 301 and 361 manufactured by Dow Chemical Ltd., and YD8125and YDF8170 manufactured by Tohto Kasei Co., Ltd. The phenol novolakepoxy resin includes Epikote 152 and 154 manufactured by Yuka ShellEpoxy Co., Ltd., EPPN-201 manufactured by Nippon Kayaku Co., Ltd., andDEN-438 manufactured by Dow Chemical Ltd., and the cresol novolak epoxyresin includes o-cresol novolac epoxy resins EOCN-102S, 103S, 104S,1012, 1025 and 1027 manufactured by Nippon Kayaku Co., Ltd., YDCN701,702, 703 and 704 manufactured by Tohto Kasei Co., Ltd. Themultifunctional epoxy resin includes Epon 1031S manufactured by YukaShell Epoxy Co., Ltd., Araldite 0163 manufacture by Ciba SpecialityChemicals, and Denacoal EX-611, 614, 614B, 622, 512, 521, 421, 411 and321 manufactured by Nagase Chemicals Ltd. The glycidyl amine epoxy resinincludes Epikote 604 manufactured by Yuka Shell Epoxy Co., Ltd., YH-434manufactured by Tohto Kasei Co., Ltd., TETRAD-X and TETRAD-Cmanufactured by Mitsubishi Gas Chemical Co., Inc., and ELM-120manufactured by Sumitomo Chemical Co., Ltd. The heterocycle-containingepoxy resin includes Araldite PT810 manufactured by Ciba SpecialityChemicals and ERL4234, 4299, 4221 and 4206 manufactured by UCC. Thealicyclic epoxy resin includes Epolead series and Ceroxide seriesmanufactured by Daicel Chemical Industries, Ltd. These epoxy resins canused alone or as a mixture of two or more thereof.

The amount of the thermosetting component (a2) incorporated ispreferably 15 to 95% by mass, more preferably 15 to 85% by mass, stillpreferably 20 to 80% by mass, most preferably 20 to 75% by mass, basedon the total amount of the resin component (A). When the amount of thethermosetting component (a2) incorporated is lower than 15% by weight,the heat resistance and fluidity of the resulting resin layer tends tobe decreased, while when the amount is higher than 95% by mass, theflexibility of the resulting resin layer tends to be decreased.

<Resin Component (A)>

In the present invention, the resin component (A) can contains not onlythe high-molecular-weight component (a1) and the thermosetting component(a2) but also the following resin components if necessary other thanthose described above. Examples of such usable resin components includea phenoxy resin, a polyamide resin, a polyamide imide resin or itsprecursor, and a polyimide resin or its precursor.

The resin component (A) preferably contains a known epoxy resin curingagent or a hardening accelerator as a catalyst for the thermosettingcomponent (a2). The epoxy resin curing agent includes, for example,amines, a polyamide, an acid anhydride, a polysulfide, borontrifluoride, bisphenols having 2 or more phenolic hydroxyl groups in onemolecule, such as bisphenol A, bisphenol F and bisphenol S, and phenolresins such as a phenol novolac resin, bisphenol A novolac resin andcresol novolac resin. Particularly, phenol resins such as a phenolnovolac resin, bisphenol A novolac resin and cresol novolac resin arepreferable from the viewpoint of excellent resistance to electricalcorrosion at the time of moisture absorption. Preferable examples ofsuch phenol resins include, for example, Pliophen LF2882, PliophenLF2822, Pliophen LF4871, Pliophen TD-2090, Pliophen TD-2149, PliophenVH-4150 and Pliophen VH4170 manufactured by Dainippon Ink And Chemicals,Incorporated.

The hardening accelerator that can be used includes those based onquaternary phosphonium salts, quaternary ammonium salts, imidazole, DBUfatty acid salts, metal chelates, metal salts and triphenyl phosphine.

<Filler (B)>

The filler (B) in the present invention is not particularly limitedinsofar as the average particle size thereof is within the range of 1 to30 μm. The filler (B) is preferably an inorganic filler, and forexample, crystalline silica, amorphous silica, aluminum oxide, titaniumoxide, calcium carbonate, magnesium carbonate, aluminum nitride andboron nitride can be used.

The average particle size of the filler (B) is preferably within therange of 1 to 25 μm, more preferably 2 to 25 μm, still more preferably 2to 20 μm. When the average particle size of the filler (B) is less than1 μm, the fluidity of the resulting resin layer tends to be decreased todeteriorate the reliability of a semiconductor device, while when theaverage particle size is more than 30 μm, the resulting resin layertends to have increased unevenness on the surface, thus decreasing itsability to be embedded.

The amount of the filler (B) incorporated is preferably 1 to 300 partsby mass, more preferably 5 to 300 parts by mass, still more preferably 5to 250 parts by mass, most preferably 5 to 200 parts by mass, based on10 parts by mass of the resin component (A). When the amount of thefiller (B) incorporated is lower than 1 part by mass, the resultingsealing film tends to become softened to reduce the reliability of theresulting semiconductor device, while when the amount of the filler ishigher than 300 parts by mass, the adhesiveness of the resulting sealingfilm and a semiconductor substrate tends to be decreased.

<Colorant (C)>

The colorant (C) in the present invention is not particularly limited,and for example, pigments such as carbon black, graphite, titaniumcarbon, manganese dioxide and phthalocyanine, or dyes can be used. Inconsideration of dispersibility and laser marking-property, non-whitecolorants such as carbon black are preferable.

The amount of the colorant (C) incorporated is preferably 0.01 to 10parts by mass, more preferably 0.2 to 8 parts by mass, still morepreferably 0.3 to 6 parts by mass, most preferably 0.5 to 5 parts bymass, based on 10 parts by mass of the resin component (A). When theamount of the colorant (C) used is lower than 0.01 part by mass, theresulting sealing film tends to be poor in coloration, to deterioratevisibility after laser marking, while when the amount of the colorant ishigher than 10 parts by mass, the adhesiveness between the resultingsealing film and a semiconductor substrate tends to be decreased.

<Resin layer>

The resin layer of the present invention may contain additives such as acoupling agent if necessary in addition to the resin component (A), thefiller (B) and the colorant (C). The coupling agent includes those basedon silane, titanium and aluminum, among which a silane coupling agent ismost preferable.

The silane coupling agent is not particularly limited, and examples ofthe silane coupling agent that can be used include vinyltrichlorosilane,vinyltris(β-methoxyethoxy) silane, vinyltriethoxysilane,vinyltrimethoxysilane, γ-methacryloxypropyltrimethoxysilane,γ-methacryloxypropylmethyldimethoxysilane,γ-(3,4-epoxycyclohexyl)ethyltrimethoxysilane,γ-glycidoxypropyltrimethoxysilane,γ-glycidoxypropylmethyldimethoxysilane,γ-glycidoxypropylmethyldiethoxysilane,N-β-(aminoethyl)-γ-aminopropyltrimethoxysilane, N-β (aminoethyl)γ-aminopropylmethyldimethoxysilane, γ-aminopropyltriethoxysilane,N-phenyl-γ-aminopropyltrimethoxysilane,γ-mercaptopropyltrimethoxysilane, γ-mercaptopropyltriethoxysilane,3-aminopropylmethyldiethoxysilane, 3-ureidopropyltriethoxysilane,3-ureidopropyltrimethoxysilane, 3-aminopropyltrimethoxysilane,3-aminopropyl-tris(2-methoxy-ethoxy-ethoxy) silane,N-methyl-3-aminopropyltrimethoxysilane, triaminopropyl-trimethoxysilane,3-4,5-dihydroimidazol-1-yl-propyltrimethoxysilane,3-methacryloxypropyl-trimethoxysilane,3-mercaptopropyl-methyldimethoxysilane,3-chloropropyl-methyldimethoxysilane, 3-chloropropyl-dimethoxysilane,3-cyanopropyl-triethoxysilane, hexamethyldisilazane,N,O-bis(trimethylsilyl)acetamide, methyltrimethoxysilane,methyltriethoxysilane, ethyltrichlorosilane, n-propyltrimethoxysilane,isobutyltrimethoxysilane, amyltrichlorosilane, octyltriethoxysilane,phenyltrimethoxysilane, phenyltriethoxysilane,methyltri(methacryloyloxyethoxy) silane, methyltri(glycidyloxy) silane,N-β (N-vinylbenzylaminoethyl)-γ-aminopropyltrimethoxysilane,octadecyldimethyl [3-(trimethoxysilyl)propyl]ammonium chloride,γ-chloropropylmethyldichlorosilane, γ-chloropropylmethyldimethoxysilane,γ-chloropropylmethyldiethoxysilane, trimethylsilyl isocyanate,dimethylsilyl isocyanate, methylsilyl triisocyanate, vinylsilyltriisocyanate, phenylsilyl triisocyanate, tetraisocyanate silane,ethoxysilane isocyanate etc., and these may be used alone or as amixture of two or more thereof.

The titanium coupling agent is not particularly limited, and examples ofthe titanium coupling agent that can be used includeisopropyltrioctanoyl titanate, isopropyldimethacrylisostearoyl titanate,isopropyltridecylbenzene sulfonyl titanate, isopropylisostearoyldiacryltitanate, isopropyltri(dioctylphosphate) titanate,isopropyltricumylphenyl titanate, isopropyltris(dioctylpyrophosphate)titanate, isopropyltris(n-aminoethyl) titanate,tetraisopropylbis(dioctylphosphite) titanate,tetraoctylbis(ditridecylphosphite) titanate,tetra(2,2-diallyloxymethyl-1-butyl)bis(ditridecyl)phosphite titanate,dicumylphenyloxy acetate titanate, bis(dioctylpyrophosphate)oxyacetatetitanate, tetraisopropyl titanate, tetra-n-butyl titanate, butyltitanate dimer, tetra(2-ethylhexyl) titanate, titanium acetyl acetonate,polytitanium ethyl acetonate, titanium octylene glycolate, titaniumlactate ammonium salt, titanium lactate, titanium lactate ethyl ester,titanium triethanol aminate, polyhydroxy titanium stearate, tetramethylorthotitanate, tetraethyl orthotitanate, tetrapropyl orthotitanate,tetraisobutyl orthotitanate, stearyl titanate, cresyl titanate monomer,cresyl titanate polymer, diisopropoxy-bis(2,4-pentadionate)titanium(IV), diisopropyl-bis-triethanol aminotitanate, octylene glycoltitanate, tetra-n-butoxy titanium polymer, tri-n-butoxy titaniummonostearate polymer, and tri-n-butoxy titanium monostearate, and thesecoupling agents may be used alone or as a mixture of two or morethereof.

The aluminum-based coupling agent is not particularly limited, andexamples of the aluminum-based coupling agent that can be used includealuminum chelate compounds such as ethylacetoacetate aluminumdiisopropylate, aluminum tris(ethylacetoacetate), alkyl acetoacetatealuminum diisopropylate, aluminum monoacetylacetatebis(ethylacetoacetate), aluminum tris(acetylacetonate),aluminum-monoisopropoxy monooleoxyethyl acetoacetate,aluminum-di-n-butoxide-mono-ethyl acetoacetate, andaluminum-di-iso-propoxide-mono-ethyl acetoacetate, and aluminumalcolates such as aluminium isopropylate, mono-sec-butoxy aluminumdiisopropylate, aluminum-sec-butylate and aluminum ethylate, and thesecoupling agents can be used alone or as a mixture of two or morethereof.

The additives such as the coupling agent are incorporated preferably inan amount of 50 parts by mass or less based on 100 parts by mass of theresin component (A) When the amount of the additives incorporated ishigher than 50 parts by mass, the heat resistance of the resultingsealing film tends to be lowered.

In the present invention, the flow of the resin layer at 80° C. iswithin the range of 150 to 1800 μm, preferably 200 to 1600 μm, morepreferably 400 to 1400 μm. When this flow is less than 150 μm, theadhesiveness between the resulting sealing film and a semiconductorsubstrate and the reliability of the resulting semiconductor devicetends to be lowered, while when the flow is more than 1800 μm, theregulation of fluidity tends to be made difficult at the time of sealinga semiconductor element with the resulting sealing film, to lowerworkability.

The flow is a value determined by laminating the resin layer of 150 μmin thickness in a B-stage state on a substrate layer, then punching a10×20 mm reed-shaped sample out from it, pressing the sample against ahot plate at 80° C. at a pressure of 0.2 MPa for 18 seconds with athermocompression bonding test apparatus (manufactured by Tester SangyoCo., Ltd.) and measuring the length of the resin having stuck out fromthe edge of the sample under an optical microscope.

This flow can be decreased by improving the degree of cure in a B-stagestate, for example by increasing the amount of the filler (B)incorporated into the resin layer, by using a multifunctional epoxyresin as the thermosetting component (a2) to increase the crosslinkingdensity of the resin layer, or by increasing heat history in filmforming (specifically the condition of drying by heating to remove thesolvent contained in a varnish for the resin layer).

The viscosity (film viscosity) at 50 to 100° C. of the resin layer inits B-stage state in the sealing film of the present invention inthermosetting viscoelasticity measurement is within the range of 10000to 100000 Pa·s, preferably 10000 to 95000, more preferably 10000 to90000, still more preferably 15000 to 90000. When the viscosity at 50 to100° C. is lower than 10000 Pa·s, the sealing film tends to become soft,to lower the reliability of the resulting semiconductor device, whilewhen the viscosity is higher 100000 Pa·s, the adhesiveness between theresulting sealing film and a semiconductor substrate tends to bedecreased.

The film viscosity can be measured by punching only the resin layer(film thickness 150 μm) out from the sealing film and measuring theresulting disk-shaped resin layer sample of 8 mm in diameter with aviscosity/viscoelasticity measuring instrument (RheoStress RS 600manufactured by Thermo Haake) in a constant-strain mode at a frequencyof 1 Hz with an applied strain of 1% at a heating rate of 5° C./min.

This film viscosity can be decreased by improving the degree of cure ina B-stage state, for example by increasing the amount of the filler (B)incorporated into the resin layer, by using a filler excellent influidity as the filler (B), by using a multifunctional epoxy resin asthe thermosetting component (a2) to increase the crosslinking density ofthe resin layer, or by increasing heat history in film forming(specifically the condition of drying by heating to remove the solventcontained in a varnish for the resin layer).

As the filler excellent in fluidity, a spherical filler may be used.

In the present invention, the storage elastic modulus of the resin layerafter cured at 170° C. for 1 hour, as determined at 35° C. with adynamic viscoelasticity measuring instrument, is within the range ofpreferably 100 to 20000 MPa, more preferably 100 to 19000 MPa, stillmore preferably 200 to 18000 MPa, further more preferably 500 to 16000MPa. When the storage elastic modulus is lower than 500 MPa, theadhesiveness between the resulting sealing film and a sealing elementmay be lowered, while when the storage elastic modulus is higher than20000 MPa, the reliability of the resulting semiconductor device may belowered.

The storage elastic modulus is a value determined by measuring the resinlayer of 150 μm in thickness in a B-stage state under the conditions of35° C. and 10 Hz with a dynamic viscoelasticity spectrometer (DVE-4)manufactured by Rheology Co., Ltd.

This storage elastic modulus can be increased by improving the degree ofcure in a B-stage state, for example by increasing the amount of thefiller (B), by using a filler excellent in fluidity, by using amultifunctional epoxy resin as the thermosetting component (a2) toincrease the crosslinking density of the resin layer, or by increasingheat history in film forming.

<Sealing Film of the Present Invention>

As shown in FIG. 1, the sealing film of the present invention maycomprise a substrate layer 1 on one side of the resin layer 2. When theresin layer comprise the substrate layer, the thickness of the resinlayer is preferably 5 μm or more, more preferably 10 μm or more, stillmore preferably 20 μm or more, most preferably 30 μm or more. Thethickness of the resin layer is preferably 800 μm or less, morepreferably 600 μm or less, still more preferably 500 μm or less, mostpreferably 400 μm or less. When the thickness of the resin layer is lessthan 5 μm, the adhesiveness of the resin layer to a semiconductorelement may be lowered, while when the thickness is more than 800 μm,the thickness of the resulting semiconductor element may be increased tohinder package designing.

The thickness of the substrate layer is preferably within the range of 5to 300 μm, more preferably 5 to 200 μm, still more preferably 5 to 100μm, most preferably 10 to 100 μm. When the thickness of the substratelayer is less than 5 μm, it may be impossible to prepare the film itselfdue to insufficient strength at the time of manufacturing the film,while when the thickness of the film is more than 300 μm, there is noparticular advantage, and the film itself may become expensive.

The material that can be used as the substrate layer is not particularlylimited, and the material that can be used includes plastic films suchas polytetrafluoroethylene film, polyethylene terephthalate film,polyethylene film, polypropylene film, polymethylpentene film,polyethylene naphthalate film, polyether sulfone film, polyether amidefilm, polyetheramide imide film, polyamide film, polyamide imide film,and polyimide film. If necessary, surface treatments such as primercoating, UV treatment, corona discharge treatment, polishing, etching,and release treatment may be conducted.

As shown in FIG. 2, the sealing film of the present invention maycomprise the substrate layer 1 on one side of the resin layer 2 and theprotective layer 3 on the other side.

The sealing film of the present invention may comprise the protectivelayer on one side of the resin layer, and the thickness of theprotective layer is preferably within the range of 5 to 300 μm, morepreferably 5 to 200 μm, still more preferably 5 to 100 μm, mostpreferably 10 to 100 μm. When the thickness of the protective layer isless than 5 μm, it may be impossible to protect the film sufficiently,while when the thickness of the film is more than 300 μm, there is noparticular advantage, and the film itself may become expensive.

The material used as the protective layer is not particularly limited,and examples of the material that can be used include plastic films suchas polytetrafluoroethylene film, polyethylene terephthalate film,polyethylene film, polypropylene film, polymethylpentene film,polyethylene naphthalate film, polyether sulfone film, polyether amidefilm, polyetheramide imide film, polyamide film, polyamide imide film,and polyimide film. If necessary, surface treatments such as primercoating, UV treatment, corona discharge treatment, polishing, etching,and release treatment may be conducted.

<Production of the Sealing Film>

Hereinafter, the sealing film of the present invention is described indetail.

The sealing film of the present invention can be prepared as follows.For example, a solvent is added to a resin layer component containing atleast the resin component (A), the filler (B) and the colorant (C) toprepare a varnish. When the sealing film comprises a substrate layer,the varnish is applied onto the substrate layer, or when the sealingfilm is composed of a resin layer only, the varnish is applied onto amold or the like, and then the solvent is removed by drying underheating to form a resin layer in a B-stage state thereby preparing thesealing film of the invention.

In the present invention, the solvent used in the varnish for the resinlayer is not particularly limited, and examples of such solvent includeether solvents such as diethylene glycol dimethyl ether, diethyleneglycol diethyl ether, triethylene glycol dimethyl ether, and triethyleneglycol diethyl ether; sulfur-containing solvents such as dimethylsulfoxide, diethyl sulfoxide, dimethyl sulfone and sulfolane; estersolvents such as γ-butyrolactone and cellosolve acetate; ketone solventssuch as cyclohexanone and methyl ethyl ketone; nitrogen-containingsolvents such as N-methyl pyrrolidone, dimethyl acetamide and1,3-dimethyl-3,4,5,6-tetrahydro-2(1H)-pyrimidinone; and aromatichydrocarbon solvents such as toluene and xylene. These solvents can beused alone or as a mixture of two or more thereof.

The conditions for drying by heating vary depending on the component ofthe resin layer and the type of the solvent, but generally, the varnishis heated at a temperature within the range of 60 to 200° C. for 3 to 30minutes. The conditions for drying by heating influence the “flow” and“film viscosity” of the sealing film of the present invention, andtherefore, when the flow or film viscosity is too low, the sealing filmshould be suitably prepared by increasing heat history, for example byincreasing the temperature for drying by heating, by increasing the timeof drying by heating, or by increasing the frequency of drying byheating.

The method of applying the varnish is not particularly limited, but inconsideration of workability, the varnish is applied preferably by usinga multi-coater.

<Semiconductor Device Using the Sealing Film of the Present Invention>

The semiconductor device of the present invention is characterized inthat it is produced by using the sealing film of the present invention.Hereinafter, its manufacturing examples and forms are described indetail by reference to the Figures, but the present invention is notlimited to the following description.

FIG. 3 is a schematic view showing a step of sealing electrodes on asemiconductor substrate with the sealing film (resin layer) of thepresent invention in the form of a rolled sealing film 8. When thesealing film of the present invention comprising the constitution shownin FIG. 1 is used, the resin layer 2 is contacted with the electrodesurface of the semiconductor substrate 4, or when the sealing film ofthe present invention comprising the constitution shown in FIG. 2 isused, the protective layer 3 is removed, then the tension of the film ismade uniform on the roll 9, and the sealing film is laminated by alamination roll 10 such that the resin layer 2 is contacted with theelectrode surface of the semiconductor substrate 4, whereby theelectrodes on the semiconductor substrate are sealed. The laminatingtemperature in the laminating step is preferably 180° C. or less, morepreferably 140° C. or less, still more preferably 120° C. or less, fromthe viewpoint of applying no loading on the semiconductor substrate andbeing excellent workability. The sealing film of the present inventionis particularly preferable for the case that the electrodes areprotruded electrodes.

The method for sealing by using the sealing film of the presentinvention is not limited to the method by film lamination as describedabove, and can be a method by thermocompression bonding or by vacuumcompression bonding the sealing film to a semiconductor substrate or amethod by directly bonding the sealing film to a semiconductor elementby heat pressing. The compression bonding conditions etc. vary dependingon the type of the sealing film used in sealing and on the shape of asemiconductor substrate or element.

FIG. 4 is a schematic view of a semiconductor element 7 comprisingprotruded electrodes sealed with the sealing film (resin layer) of thepresent invention. Such semiconductor element can be obtained by sealingprotruded electrodes 5 of a semiconductor substrate as shown in FIG. 3followed by, for example, a step of releasing the substrate layer fromthe sealing film, a step of curing the resin layer 2 by heating, a stepof mounting solder balls 6 on the protruded electrodes 5, a step oflaminating a dicing tape on the opposite side of the semiconductorsubstrate to the side thereof sealed with the resin layer, a step ofdicing the semiconductor substrate in predetermined size, and a step ofreleasing the dicing tape from the semiconductor substrate comprisingthe protruded electrodes 5. By mounting the resulting semiconductorelement on a predetermined position of a circuit substrate, asemiconductor device can be obtained.

The semiconductor substrate 4 comprising the protruded electrodes is notparticularly limited and includes, for example, silicon wafers etc.After a semiconductor element is prepared by the above-mentioned method,the semiconductor element can display discrimination information fordiscriminating the product by irradiating its sealing film with a YAGlaser etc.

The semiconductor element obtained by sealing with the sealing film ofthe present invention is excellent in reliability etc. and can thus beused in various semiconductor devices, and can also be used in sealingvarious devices such as SAW devices and various sensors.

EXAMPLES

Hereinafter, the present invention is described in more detail byreference to the Examples, but the present invention is not limitedthereto.

Example 1 Preparation of a Sealing Film

Cyclohexanone was added to a composition consisting of 12.4 parts bymass of an epoxy group-comprising acrylic rubber (trade name:HHTR-860P-3DR, with a weight-average molecular weight of 800,000 and aTg of −7° C., manufactured by Nagase ChemteX Corporation) as thehigh-molecular-weight component (a1), 33.6 parts by mass of a bisphenolF epoxy resin (trade name: YD-8170C, with an epoxy equivalent of 160,manufactured by Tohto Kasei Co., Ltd.) and 33.8 parts by mass of aphenol/p-xylylene glycol dimethyl ether copolymer resin (trade name:Mirex XLC-LL, with a hydroxyl equivalent of 174, manufactured by MitsuiChemicals, Inc.) as the thermosetting component (a2), 0.1 part by massof 1-cyano-1-phenyl imidazole (trade name: Curezole 2PZ-CN, manufacturedby Shikoku Chemicals Corporation), 356.24 parts by mass of a silicafiller (trade name: TFC-24, with an average particle size of about 8 μm,manufactured by Tatumori Ltd.) as the filler (B), 8.3 parts by mass of aresin processed pigment (trade name: FP BLACK 308, with a carbon blackcontent of 29.0 mass %, manufactured by Sanyo Color Works, Ltd.) as thecolorant (C) and 1.0 part by mass of γ-glycidoxypropyltrimethoxy silane(trade name: SH6040, manufactured by Dow Corning Toray Co, Ltd.) as thecoupling agent. Then, the mixture was mixed under stirring and thenvacuum-degassed to give a varnish with about 60 mass % nonvolatilecontent (abbreviated hereinafter as NV). Measurement and calculation ofNV are as follows:

-   NV (mass %)=(amount (g) of the varnish after drying by    heating/amount (g) of the varnish before drying by heating)×100-   *Drying conditions: 170° C., 1 hour

The varnish obtained above was applied onto a substrate layer (tradename: Purex A31B, a release agent-treated polyethylene terephthalatefilm with a film thickness of 38 μm, manufactured by Teijin DuPont FilmsJapan Limited) and then dried by heating at 90° C. for 5 minutes andthen at 140° C. for 5 minutes to form a coating film consisting of aresin layer of 150 μm in thickness after drying by heating, whereby asealing film A in a B-stage state was obtained.

<Evaluation of a Sealing Film (Resin Layer)>

The sealing film A (resin layer) obtained above was evaluated for itsflow, film viscosity, modulus of elongation, Tg, thermal decompositiononset point, embedding property, and laser marking visibility, as shownbelow. The results are collectively shown in Table 1.

Flow

A 10×20 mm reed-shaped sample was punched out from the sealing film Aobtained above, and then the sample comprising the sealing filmlaminated on the substrate layer was pressed against a hot plate at 80°C. at a pressure of 0.2 MPa for 18 seconds with a thermocompressionbonding apparatus (manufactured by Tester Sangyo Co., Ltd.), and thenthe length of the resin having stuck out from the edge of the sample wasmeasured as flow under an optical microscope.

Film Viscosity

The varnish obtained above was applied onto a substrate layer (tradename: Purex A31, a release agent-treated polyethylene terephthalate filmwith a film thickness of 38 μm, manufactured by Teijin DuPont FilmsJapan Limited) and then dried by heating at 90° C. for 5 minutes andthen at 140° C. for 5 minutes to form a coating film consisting of aresin layer of 150 μm in thickness after drying by heating, whereby afilm A in a B-stage state was obtained. The resin layer only (filmthickness 150 μm) of the resulting film A was punched out in the form ofa disk of 8 mm in diameter and then measured for its film viscosity at atemperature of from 50° C. to 100° C. at a heating rate of 5° C./min. ina constant-strain mode at a frequency of 1 Hz with an applied strain of1% with a viscosity/viscoelasticity measuring instrument (RheoStress RS600 manufactured by Thermo Haake). Table 1 shows film viscosity at 50°C. and film viscosity at 100° C.

Storage Elastic Modulus and Tg

The sealing film A obtained above was cured at 170° C. for 1 hour, andthe part of the resin layer was measured for its storage elastic modulus(35° C., 10 Hz) and glass transition temperature (frequency 10 Hz,heating rate 2° C./min) with a dynamic viscoelasticity spectrometer(DVE-4, manufactured by Rheology Co., Ltd.)

Thermal Decomposition Onset Point

The resin layer of the sealing film A was measured for its thermaldecomposition onset point at a heating rate of 10° C./min. in an airatmosphere with a differential thermal balance (SSC5200, manufactured bySeiko Instruments Inc.)

Embedding Property

The sealing film A obtained above was laminated on a semiconductorsubstrate having wiring and copper posts formed thereon (pitchdimensions: 5.3 mm×6.3 mm, scribe line: 100 μm, copper post diameter:300 μm, copper post height: 100 μm), by a hot roll laminator (tradename: VA-400III, manufactured by Taisei Laminator Co., Ltd.) (laminatingconditions: 80° C., 0.2 MPa, 0.5 m/min). After lamination, thesemiconductor substrate on which the sealing film A had been laminatedwas cut at the part of the copper posts, and then its section wasmeasured with an optical microscope, to evaluate the ability of thesealing film to be embedded under the following criteria (samplesevaluated as ◯ and Δ are acceptable).

◯: No generation of voids due to insufficient embedding

Δ: Slight generation of voids due to insufficient embedding (degree ofgeneration of voids: less than 10% of the total number of copper posts)

X: Certain generation of voids due to insufficient embedding (degree ofgeneration of voids: 10 to 50% of the total number of copper posts)

XX: Almost entire generation of voids due to insufficient embedding(degree of generation of voids: more than 50% of the total number ofcopper posts)

Laser Marking Visibility

The sealing film A obtained above was laminated on a mirror surface of asilicon wafer of 300 μm in thickness by a hot roll laminator (tradename: VA-400III, manufactured by Taisei Laminator Co., Ltd.) (laminatingconditions: 80° C., 0.2 MPa, 0.5 m/min) to give the silicon waferprovided with the sealing film, then the substrate layer was released,and the silicon wafer provided with the resin layer was cured at 170° C.for 1 hour and then subjected at the side of the resin layer to lasermarking with a YAG laser with an output power of 5.0 J/pulse, and itsvisibility was confirmed (number of samples: 100).

The method for evaluating visibility involves incorporating an image byscanning the surface after marked with the laser and then displaying amarked part and its surrounding unmarked part in two tones by imageprocessing software (trade name: PHOTSHOP manufactured by Adobe). Bythis operation, the laser-marked surface is divided into 256monochromatic levels depending on luminosity. Then, “the threshold of aborder at which the marked and unmarked parts are displayed in 2 tones”wherein the marked part is displayed in white and the unmarked part isdisplayed in black, and “the threshold of a border at which the markedand unmarked parts are displayed in 2 tones” wherein the marked part isalso displayed in black so the border between the marked and theunmarked parts disappears, were determined, and when the differencebetween the two thresholds was 40 or more, the sealing film was judgedto be excellent in visibility (evaluation: ◯); when the differencebetween the two thresholds was 30 or more to less than 40, the sealingfilm was judged to be almost excellent in visibility (evaluation: Δ);and when the difference between the two thresholds was less than 30, thesealing film was judged to be poor in visibility (evaluation: X). Thenumbers of samples corresponding to the evaluations ◯, Δ and Xrespectively are shown in Table 1.

<Preparation and Evaluation of a Semiconductor Device>

The sealing film A obtained above was laminated on a semiconductorsubstrate having wiring and copper posts formed thereon (pitchdimensions: 5.3 mm×6.3 mm, scribe line: 100 μm, copper post diameter:300 μm, copper post height: 100 μm), by a hot roll laminator (tradename: VA-400III, manufactured by Taisei Laminator Co., Ltd.) (laminatingconditions: 80° C., 0.2 MPa, 0.5 m/min) and then the substrate layer wasreleased, followed by a step of curing the resin layer at 170° C. for 1hour, a step of grinding the resin layer to expose the copper posts tothe surface, a step of forming relay terminals on the copper posts, astep of dicing it, and a step of picking up the resulting semiconductorelement and mounting it on an organic substrate, whereby a semiconductordevice was prepared.

Then, this semiconductor device was subjected to 1000 cycles in a heatcycle test (number of samples: 10), each cycle consisting of −55° C./30min.⇄125° C./30 min., to examine whether the resin layer had cracked ornot. The results are shown in Table 1. Table 1 shows (number ofsemiconductor devices having a cracked resin layer)/(total number ofsamples).

Example 2 Preparation of a Sealing Film

A sealing film B in a B-stage state was obtained in the same manner asin Example 1 except that the dry conditions of the varnish applied on asubstrate layer were 90° C. for 10 minutes and 140° C. for 10 minutesinstead of 90° C. for 5 minutes and 140° C. for 5 minutes.

<Evaluation of the Sealing Film (Resin Layer)>

The sealing film B obtained above was evaluated in the same manner as inExample 1. The results are collectively shown in Table 1.

<Preparation and Evaluation of a Semiconductor Device>

A semiconductor device was prepared and evaluated in the same manner asin Example 1 except that the sealing film B obtained above was used inplace of the sealing film A. The results are shown in Table 1.

Example 3 Preparation of a Sealing Film

A sealing film C in a B-stage state was obtained in the same manner asin Example 1 except that the dry conditions of the varnish applied on asubstrate layer were 90° C. for 7 minutes and 140° C. for 7 minutesinstead of 90° C. for 5 minutes and 140° C. for 5 minutes.

<Evaluation of the Sealing Film (Resin Layer)>

The sealing film C obtained above was evaluated in the same manner as inExample 1. The results are collectively shown in Table 1.

<Preparation and Evaluation of a Semiconductor Device>

A semiconductor device was prepared and evaluated in the same manner asin Example 1 except that the sealing film C obtained above was used inplace of the sealing film A. The results are shown in Table 1.

Example 4 Preparation of a Sealing Film

A sealing film D in a B-stage state was obtained in the same manner asin Example 1 except that the dry conditions of the varnish applied on asubstrate layer were 90° C. for 3 minutes and 140° C. for 3 minutesinstead of 90° C. for 5 minutes and 140° C. for 5 minutes.

<Evaluation of the Sealing Film (Resin Layer)>

The sealing film D obtained above was evaluated in the same manner as inExample 1. The results are collectively shown in Table 1.

<Preparation and Evaluation of a Semiconductor Device>

A semiconductor device was prepared and evaluated in the same manner asin Example 1 except that the sealing film D obtained above was used inplace of the sealing film A. The results are shown in Table 1.

Example 5 Preparation of a Sealing Film

Cyclohexanone was added to a composition consisting of 12.4 parts bymass of an epoxy group-comprising acrylic rubber (trade name:HHTR-860P-3DR, with a weight-average molecular weight of 800,000 and aTg of −7° C., manufactured by Nagase ChemteX Corporation) as thehigh-molecular-weight component (a1), 33.6 parts by mass of a bisphenolF epoxy resin (trade name: YD-8170C, with an epoxy equivalent of 160,manufactured by Tohto Kasei Co., Ltd.) and 33.8 parts by mass of aphenol/p-xylylene glycol dimethyl ether copolymer resin (trade name:Mirex XLC-LL, with a hydroxyl equivalent of 174, manufactured by MitsuiChemicals, Inc.) as the thermosetting component (a2), 0.1 part by massof 1-cyano-1-phenyl imidazole (trade name: Curezole 2PZ-CN, manufacturedby Shikoku Chemicals Corporation) 152.6 parts by mass of a silica filler(trade name: TFC-24, with an average particle size of about 8 μm,manufactured by Tatumori Ltd.) as the filler (B), 8.55 parts by mass ofa resin processed pigment (trade name: FP BLACK 308, with a carbon blackcontent of 29.0 mass %, manufactured by Sanyo Color Works, Ltd.) as thecolorant (C) and 1.0 part by mass of γ-glycidoxypropyltrimethoxy silane(trade name: SH6040, manufactured by Dow Corning Toray Co., Ltd.) as thecoupling agent. Then, the mixture was mixed under stirring and thenvacuum-degassed to give a varnish with about 60 mass % NV.

The varnish obtained above was applied onto a substrate layer (tradename: Purex A31B, a release agent-treated polyethylene terephthalatefilm with a film thickness of 38 μm, manufactured by Teijin DuPont FilmsJapan Limited) and then dried by heating at 90° C. for 10 minutes andthen at 140° C. for 10 minutes to form a coating film consisting of aresin layer of 150 μm in thickness after drying by heating, whereby asealing film E in a B-stage state was obtained.

<Evaluation of the Sealing Film (Resin Layer)>

The sealing film E obtained above was evaluated in the same manner as inExample 1. The results are collectively shown in Table 1.

<Preparation and Evaluation of a Semiconductor Device>

A semiconductor device was prepared and evaluated in the same manner asin Example 1 except that the sealing film E obtained above was used inplace of the sealing film A. The results are shown in Table 1.

TABLE 1 Example 1 Example 2 Example 3 Example 4 Example 5 Compsition a1HTR860*1 12.4 12.4 12.4 12.4 12.4 a2 YD8170C*2 33.6 33.6 33.6 33.6 33.6XLC-LL*3 33.8 33.8 33.8 33.8 33.8 YDCN703*4 0 0 0 0 0 LF4871*5 0 0 0 0 0B TFC-24*6 356.24 356.24 356.24 356.24 152.6 TFC-12*7 0 0 0 0 0 FB-35*80 0 0 0 0 SO-C2*9 0 0 0 0 0 C FP308*10 8.3 8.3 8.3 8.3 8.55 Others2PZ-CN*11 0.1 0.1 0.1 0.1 0.1 SH6040*12 1 1 1 1 1 A189*13 0 0 0 0 0A1160*14 0 0 0 0 0 Film making conditions 1 bath  90/5  90/10  90/7 90/3  90/10 (Temp. (° C.)/Time(min)) 2 bath 140/5 140/10 140/7 140/3140/10 a1/(a1 + a2) 5~85 15.54 15.54 15.54 15.54 15.54 A 10 10 10 10 1010 B 5~300 44.64 44.64 44.64 44.64 19.12 C 0.01~10 1.04 1.04 1.04 1.041.07 B-stage film A B C D E Film Flow (μm) 1,000 240 550 1550 1,000characteristics Film viscosity (50° C.) 80,000 30,000 40,000 95,00080,000 (Pa · s) (100° C.) 20,000 12,000 20,000 40,000 20,000 Strageelastic modulus 11,000 11,000 11,000 11,000 7,000 (35° C., MPa) Tg (°C.) 160 160 160 160 160 Thermal decomposition 350 350 350 350 350 onsetpoint (° C.) Embedding property ∘ Δ ∘ ∘ Δ Laser marking ∘ 100 100 100100 100 visibility Δ 0 0 0 0 0 x 0 0 0 0 0 Evaluation of semiconductordevice   0/10  1/10   0/10   1/10  2/10 *1: Epoxy group-comprisingacrylic rubber (weight-average molecular weight: 800,000, Tg: −7° C.)*2: Bisphenol F epoxy resin (epoxy equivalent 160) *3: Phenol/p-xylyleneglycol dimethyl ether copolymer resin (hydroxyl equivalent 174) *4:Cresol novolac epoxy resin (epoxy equivalent 210) *5: Phenol novolacresin *6: Silica filler (average particle size about 8 μm) *7: Silicafiller (average particle size about 4 μm) *8: Silica filler (averageparticle size about 10 μm) *9: Silica filler (average particle sizeabout 0.5 μm) *10: Resin-based processed pigment (carbon black content29.0 mass %) *11: 1-Cyano-1-phenyl imidazole *12:γ-Glycidoxypropyltrimethoxy silane *13: γ-Mercaptopropyltrimethoxysilane *14: γ-Ureidopropyltrimethoxy silane

Comparative Example 1 Preparation of a Sealing Film

Cyclohexanone was added to a composition consisting of 12.4 parts bymass of an epoxy group-comprising acrylic rubber (trade name:HHTR-860P-3DR, with a weight-average molecular weight of 800,000 and aTg of −7° C., manufactured by Nagase ChemteX Corporation) as thehigh-molecular-weight component (a1), 33.6 parts by mass of a bisphenolF epoxy resin (trade name: YD-8170C, with an epoxy equivalent of 160,manufactured by Tohto Kasei Co., Ltd.) and 33.8 parts by mass of aphenol/p-xylylene glycol dimethyl ether copolymer resin (trade name:Mirex XLC-LL, with a hydroxyl equivalent of 174, manufactured by MitsuiChemicals, Inc.) as the thermosetting component (a2), 0.1 part by massof 1-cyano-1-phenyl imidazole (trade name: Curezole 2PZ-CN, manufacturedby Shikoku Chemicals Corporation), 8.3 parts by mass of a resin-basedprocessed pigment (trade name: FP BLACK 308, with a carbon black contentof 29.0 mass %, manufactured by Sanyo Color Works, Ltd.) as the colorant(C) and 1.0 part by mass of γ-glycidoxypropyltrimethoxy silane (tradename: SH6040, manufactured by Dow Corning Toray Co., Ltd.) as thecoupling agent. Then, the mixture was mixed under stirring and thenvacuum-degassed to give a varnish with about 60 mass % NV.

The varnish obtained above was applied onto a substrate layer (tradename: Purex A31B, a release agent-treated polyethylene terephthalatefilm with a film thickness of 38 μm, manufactured by Teijin DuPont FilmsJapan Limited) and then dried by heating at 90° C. for 20 minutes andthen at 140° C. for 20 minutes to form a coating film consisting of aresin layer of 150 μm in thickness after drying by heating, whereby asealing film F in a B-stage state was obtained.

<Evaluation of the Sealing Film (Resin Layer)>

The sealing film F obtained above was evaluated in the same manner as inExample 1. The results are collectively shown in Table 2.

<Preparation and Evaluation of a Semiconductor Device>

A semiconductor device was prepared and evaluated in the same manner asin Example 1 except that the sealing film F obtained above was used inplace of the sealing film A. The results are shown in Table 2.

Comparative Example 2 Preparation of a Sealing Film

A sealing film G in a B-stage state was obtained in the same manner asin Comparative Example 1 except that the dry conditions of the varnishapplied on a substrate layer were 90° C. for 15 minutes and 140° C. for15 minutes instead of 90° C. for 20 minutes and 140° C. for 20 minutes.

<Evaluation of the Sealing Film (Resin Layer)>

The sealing film G obtained above was evaluated in the same manner as inExample 1. The results are collectively shown in Table 2.

<Preparation and Evaluation of a Semiconductor Device>

A semiconductor device was prepared and evaluated in the same manner asin Example 1 except that the sealing film G obtained above was used inplace of the sealing film A. The results are shown in Table 2.

Comparative Example 3 Preparation of a Sealing Film

A sealing film H in a B-stage state was obtained in the same manner asin Comparative Example 1 except that the dry conditions of the varnishapplied on a substrate layer were 90° C. for 3 minutes and 115° C. for 3minutes instead of 90° C. for 20 minutes and 140° C. for 20 minutes.

<Evaluation of the Sealing Film (Resin Layer)>

The sealing film H obtained above was evaluated in the same manner as inExample 1. The results are collectively shown in Table 2.

<Preparation and Evaluation of a Semiconductor Device>

A semiconductor device was prepared and evaluated in the same manner asin Example 1 except that the sealing film H obtained above was used inplace of the sealing film A. The results are shown in Table 2.

TABLE 2 Comparative Comparative Comparative Example 1 Example 2 Example3 Compsition a1 HTR860*1 12.4 12.4 12.4 a2 YD8170C*2 33.6 33.6 33.6XLC-LL*3 33.8 33.8 33.8 YDCN703*4 0 0 0 LF4871*5 0 0 0 B TFC-24*6 0 0 0TFC-12*7 0 0 0 FB-35*8 0 0 0 SO-C2*9 0 0 0 C FP308*10 8.3 8.3 8.3 Others2PZ-CN*11 0.1 0.1 0.1 SH6040*12 1 1 1 A189*13 0 0 0 A1160*14 0 0 0 Filmmaking conditions 1 bath  90/5 90/15  90/3 (Temp. (° C.)/Time(min)) 2bath 140/5 140/15  115/3 a1/(a1 + a2) 5~85 15.54 15.54 15.54 A 10 10 1010 B 5~300 0 0 0 C 0.01~10 1.04 1.04 1.04 B-stage film F G H Film Flow(μm) 1,400 110 1,900 characteristics Film viscosity (50° C.) 40,000150,000 170,000 (Pa · s) (100° C.) 9,000 20,000 20,000 Strage elasticmodulus 90 11,000 11,000 (35° C., MPa) Tg (° C.) 160 160 160 Thermaldecomposition 50 350 350 onset point (° C.) Embedding property ∘ xx xLaser marking ∘ 45 100 100 visibility Δ 55 0 0 x 0 0 0 Evaluation ofsemiconductor device  10/10 10/10   7/10 *1 to 14: The same as in Table1.

As can be seen from Table 1, the sealing films in Examples 1 to 5 areexcellent in all of embedding property, adhesiveness to a semiconductorsubstrate and laser marking visibility.

Example 6 Preparation of a Sealing Film

Cyclohexanone was added to a composition consisting of 33.4 parts bymass of an epoxy group-comprising acrylic rubber (trade name:HTR-860P-3DR, with a weight-average molecular weight of 800,000 and a Tgof −7° C., manufactured by Nagase ChemteX Corporation) as thehigh-molecular-weight component (a1), 33.6 parts by mass of a bisphenolF epoxy resin (trade name: YD-8170C, with an epoxy equivalent of 160,manufactured by Tohto Kasei Co., Ltd.) and 33.8 parts by mass of aphenol/p-xylylene glycol dimethyl ether copolymer resin (trade name:Mirex XLC-LL, with a hydroxyl equivalent of 174, manufactured by MitsuiChemicals, Inc.), as the thermosetting component (a2), 0.5 part by massof 1-cyano-1-phenyl imidazole (trade name: Curezole 2PZ-CN, manufacturedby Shikoku Chemicals Corporation) 152.6 parts by mass of a silica filler(trade name: TFC-12, with an average particle size of about 4 μm,manufactured by Tatumori Ltd.) as the filler (B), and 2.5 parts by massof a resin processed pigment (trade name: FP BLACK J308, with a carbonblack content of 29.0 mass %, manufactured by Sanyo Color Works, Ltd.)as the colorant (C). Then, the mixture was mixed under stirring and thenvacuum-degassed to give a varnish with about 60 mass % nonvolatilecontent (abbreviated hereinafter as NV).

The varnish obtained above was applied onto a substrate layer (tradename: Purex A31B, a release agent-treated polyethylene terephthalatefilm with a film thickness of 38 μm, manufactured by Teijin DuPont FilmsJapan Limited) and then dried by heating at 90° C. for 5 minutes andthen at 140° C. for 5 minutes to form a coating film of 188 μm inthickness, whereby a film I in a B-stage state (thickness of the resinlayer: 150 μm) was obtained.

<Evaluation of the Sealing Film (Resin Layer)>

The sealing film I obtained above was evaluated in the same manner as inExample 1. The results are collectively shown in Table 3.

<Preparation and Evaluation of a Semiconductor Device>

A semiconductor device was prepared and evaluated in the same manner asin Example 1 except that the sealing film I obtained above was used inplace of the sealing film A. The results are shown in Table 3.

Example 7 Preparation of a Sealing Film

A film J in a B-stage state (thickness of the resin layer: 150 μm) wasobtained in the same manner as in Example 6 except that 152.6 parts bymass of a silica filler (trade name: TFC-24, with an average particlesize of about 8 μm, manufactured by Tatumori Ltd.) were used in place of152.6 parts by mass of the silica filler (trade name: TFC-12, with anaverage particle size of about 4 μm, manufactured by Tatumori Ltd.) asthe filler (B).

<Evaluation of the Sealing Film (Resin Layer)>

The sealing film J obtained above was evaluated in the same manner as inExample 1. The results are collectively shown in Table 3.

<Preparation and Evaluation of a Semiconductor Device>

A semiconductor device was prepared and evaluated in the same manner asin Example 1 except that the sealing film J obtained above was used inplace of the sealing film A. The results are shown in Table 3.

Example 8 Preparation of a Sealing Film

A film K in a B-stage state (thickness of the resin layer: 150 μm) wasobtained in the same manner as in Example 6 except that 1-cyano-1-phenylimidazole (trade name: Curezole 2PZ-CN, manufactured by ShikokuChemicals Corporation) was used in an amount of 0.3 part by mass inplace of 0.5 part by mass, and 152.6 parts by mass of a silica filler(trade name: TFC-24, with an average particle size of about 8 μm,manufactured by Tatumori Ltd.) were used in place of 152.6 parts by massof the silica filler (trade name: TFC-12, with an average particle sizeof about 4 μm, manufactured by Tatumori Ltd.) as the filler (B).

<Evaluation of the Sealing Film (Resin Layer)>

The sealing film K obtained above was evaluated in the same manner as inExample 1. The results are collectively shown in Table 3.

<Preparation and Evaluation of a Semiconductor Device>

A semiconductor device was prepared and evaluated in the same manner asin Example 1 except that the sealing film K obtained above was used inplace of the sealing film A. The results are shown in Table 3.

Example 9 Preparation of a Sealing Film

A film L in a B-stage state (thickness of the resin layer: 150 μm) wasobtained in the same manner as in Example 7 except that 105.2 parts bymass of a silica filler (trade name: TFC-24, with an average particlesize of about 8 μm, manufactured by Tatumori Ltd.) were used in place of152.6 parts by mass of the silica filler (trade name: TFC-12, with anaverage particle size of about 4 μm, manufactured by Tatumori Ltd.) asthe filler (B).

<Evaluation of the Sealing Film (Resin Layer)>

The sealing film L obtained above was evaluated in the same manner as inExample 1. The results are collectively shown in Table 4.

<Preparation and Evaluation of a Semiconductor Device>

A semiconductor device was prepared and evaluated in the same manner asin Example 1 except that the sealing film L obtained above was used inplace of the sealing film A. The results are shown in Table 4.

Example 10 Preparation of a Sealing Film

A film M in a B-stage state (thickness of the resin layer: 150 μm) wasobtained in the same manner as in Example 6 except that 209.8 parts bymass of a silica filler (trade name: TFC-24, with an average particlesize of about 8 μm, manufactured by Tatumori Ltd.) were used in place of152.6 parts by mass of the silica filler (trade name: TFC-12, with anaverage particle size of about 4 μm, manufactured by Tatumori Ltd.) asthe filler (B).

<Evaluation of the Sealing Film (resin layer)>

The sealing film M obtained above was evaluated in the same manner as inExample 1. The results are collectively shown in Table 4.

<Preparation and Evaluation of a Semiconductor Device>

A semiconductor device was prepared and evaluated in the same manner asin Example 1 except that the sealing film M obtained above was used inplace of the sealing film A. The results are shown in Table 4.

Example 11 Preparation of a Sealing Film

A film N in a B-stage state (thickness of the resin layer: 150 μm) wasobtained in the same manner as in Example 7 except that 152.6 parts bymass of a silica filler (trade name: FB-35, with an average particlesize of about 10 μm, manufactured by Denki Kagaku Kogyo KabushikiKaisha) were used in place of 152.6 parts by mass of the silica filler(trade name: TFC-12, with an average particle size of about 4 μm,manufactured by Tatumori Ltd.) as the filler (B).

<Evaluation of the Sealing Film (Resin Layer)>

The sealing film N obtained above was evaluated in the same manner as inExample 1. The results are collectively shown in Table 4.

<Preparation and Evaluation of a Semiconductor Device>

A semiconductor device was prepared and evaluated in the same manner asin Example 1 except that the sealing film N obtained above was used inplace of the sealing film A. The results are shown in Table 4.

TABLE 3 Example 6 Example 7 Example 8 Compsition a1 HTR860*1 33.4 33.433.4 a2 YD8170C*2 33.6 33.6 33.6 XLC-LL*3 33.8 33.8 33.8 YDCN703*4 0 0 0LF4871*5 0 0 0 B TFC-24*6 0 152.6 152.6 TFC-12*7 152.6 0 0 FB-35*8 0 0 0SO-C2*9 0 0 0 C FP308*10 2.5 2.5 2.5 Others 2PZ-CN*11 0.5 0.5 0.3SH6040*12 0 0 0 A189*13 0 0 0 A1160*14 0 0 0 Film making conditions 1bath  90/5  90/5  90/5 (Temp. (° C.)/Time(min)) 2 bath 140/5 140/5 140/5a1/(a1 + a2) 5~85 33.13 33.13 33.13 A 10 10 10 10 B 5~300 15.14 15.1415.14 C 0.01~10 0.25 0.25 0.25 B-stage film I J K Film Flow (μm) 450 700800 characteristics Film viscosity (50° C.) 70,000 60,000 60,000 (Pa ·s) (100° C.) 18,000 18,000 30,000 Strage elastic modulus 6,000 6,0006,000 (35° C., MPa) Tg (° C.) 165 165 165 Thermal decomposition onset380 380 380 point (° C.) Embedding property ∘ ∘ ∘ Laser marking ∘ 100100 100 visibility Δ 0 0 0 x 0 0 0 Evaluation of semiconductor device  0/10   0/10   0/10 *1 to 14: The same as in Table 1.

TABLE 4 Example 9 Example 10 Example 11 Compsition a1 HTR860*1 33.4 33.433.4 a2 YD8170C*2 33.6 33.6 33.6 XLC-LL*3 33.8 33.8 33.8 YDCN703*4 0 0 0LF4871*5 0 0 0 B TFC-24*6 105.2 209.8 0 TFC-12*7 0 0 0 FB-35*8 0 0 152.6SO-C2*9 0 0 0 C FP308*10 2.5 2.5 2.5 Others 2PZ-CN*11 0.5 0.5 0.5SH6040*12 0 0 0 A189*13 0 0 0 A1160*14 0 0 0 Film making conditions 1bath  90/5  90/5  90/5 (Temp. (° C.)/Time(min)) 2 bath 140/5 140/5 140/5a1/(a1 + a2) 5~85 33.13 33.13 33.13 A 10 10 10 10 B 5~300 10.44 20.8115.14 C 0.01~10 0.25 0.25 0.25 B-stage film L M N Film Flow (μm) 1,000600 500 characteristics Film viscosity (50° C.) 80,000 40,000 65,000 (Pa· s) (100° C.) 20,000 16,000 19,000 Strage elastic modulus 5,000 7,0006,000 (35° C., MPa) Tg (° C.) 165 165 165 Thermal decomposition 380 380380 onset point (° C.) Embedding property ∘ ∘ ∘ Laser marking ∘ 100 100100 visibility Δ 0 0 0 x 0 0 0 Evaluation of semiconductor device   0/10  0/10   0/10 *1 to 14: The same as in Table 1.

Comparative Example 4 Preparation of a Sealing Film

Cyclohexanone was added to a composition consisting of parts by mass ofan epoxy group-comprising acrylic rubber (trade name: HTR-860P-3DR, witha weight-average molecular weight of 800,000 and a Tg of −7° C.,manufactured by Nagase ChemteX Corporation) as the high-molecular-weightcomponent (a1), 33.6 parts by mass of a bisphenol F epoxy resin (tradename: YD-8170C, with an epoxy equivalent of 160, manufactured by TohtoKasei Co., Ltd.) and 33.8 parts by mass of a phenol/p-xylylene glycoldimethyl ether copolymer resin (trade name: Mirex XLC-LL, with ahydroxyl equivalent of 174, manufactured by Mitsui Chemicals, Inc.) asthe thermosetting component (a2), 0.5 part by mass of 1-cyano-1-phenylimidazole (trade name: Curezole 2PZ-CN, manufactured by ShikokuChemicals Corporation), 152.6 parts by mass of a silica filler (tradename: SO-CS, with an average particle size of about 0.4 to 0.6 μm,manufactured by Admafine Co., Ltd.) as the filler (B), and 2.5 parts bymass of a resin processed pigment (trade name: FP BLACK J308, with acarbon black content of 29.0 mass %, manufactured by Sanyo Color Works,Ltd.) as the colorant (C). Then, the mixture was mixed under stirringand then vacuum-degassed to give a varnish with about 60 mass %nonvolatile content (abbreviated hereinafter as NV).

The varnish obtained above was applied onto a substrate layer (tradename: Purex A31, a release agent-treated polyethylene terephthalate filmwith a film thickness of 38 μm, manufactured by Teijin DuPont FilmsJapan Limited) and then dried by heating at 90° C. for 5 minutes andthen at 140° C. for 5 minutes to form a coating film of 188 μm, wherebya film O in a B-stage state (thickness of the resin layer: 150 μm) wasobtained.

<Evaluation of the Sealing Film (Resin Layer)>

The sealing film O obtained above was evaluated in the same manner as inExample 1. The results are collectively shown in Table 5.

<Preparation and Evaluation of a Semiconductor Device>

A semiconductor device was prepared and evaluated in the same manner asin Example 1 except that the sealing film O obtained above was used inplace of the sealing film A. The results are shown in Table 5.

Comparative Example 5 Preparation of a Sealing Film

A sealing film P in a B-stage state was obtained in the same manner asin Comparative Example 4 except that the dry conditions of the varnishapplied on a substrate layer were 90° C. for 15 minutes and 140° C. for15 minutes instead of 90° C. for 5 minutes and 140° C. for 5 minutes.

<Evaluation of the Sealing Film (Resin Layer)>

The sealing film P obtained above was evaluated in the same manner as inExample 1. The results are collectively shown in Table 5.

<Preparation and Evaluation of a Semiconductor Device>

A semiconductor device was prepared and evaluated in the same manner asin Example 1 except that the sealing film P obtained above was used inplace of the sealing film A. The results are shown in Table 5.

Comparative Example 6 Preparation of a Sealing Film

Cyclohexanone was added to a composition consisting of 4.72 parts bymass of an epoxy group-comprising acrylic rubber (trade name:HTR-860P-3DR, with a weight-average molecular weight of 800,000 and a Tgof −7° C., manufactured by Nagase ChemteX Corporation) as thehigh-molecular-weight component (a1), 47.04 parts by mass of a bisphenolF epoxy resin (trade name: YD-8170C, with an epoxy equivalent of 160,manufactured by Tohto Kasei Co., Ltd.) and 47.32 parts by mass of aphenol/p-xylylene glycol dimethyl ether copolymer resin (trade name:Mirex XLC-LL, with a hydroxyl equivalent of 174, manufactured by MitsuiChemicals, Inc.) as the thermosetting component (a2), 0.5 part by massof 1-cyano-1-phenyl imidazole (trade name: Curezole 2PZ-CN, manufacturedby Shikoku Chemicals Corporation) and 2.5 parts by mass of a resinprocessed pigment (trade name: FP BLACK J308, with a carbon blackcontent of 29.0 mass %, manufactured by Sanyo Color Works, Ltd.) as thecolorant (C). Then, the mixture was mixed under stirring and thenvacuum-degassed to give a varnish with about 60 mass % nonvolatilecontent (abbreviated hereinafter as NV).

The varnish obtained above was applied onto a substrate layer (tradename: Purex A31B, a release agent-treated polyethylene terephthalatefilm with a film thickness of 38 μm, manufactured by Teijin DuPont FilmsJapan Limited) and then dried by heating at 90° C. for 5 minutes andthen at 140° C. for 5 minutes to form a coating film of 188 μm inthickness, whereby a film Q in a B-stage state (thickness of the resinlayer: 150 μm) was obtained.

<Evaluation of the Sealing Film (Resin Layer)>

The sealing film Q obtained above was evaluated in the same manner as inExample 1. The results are collectively shown in Table 5.

<Preparation and Evaluation of a Semiconductor Device>

A semiconductor device was prepared and evaluated in the same manner asin Example 1 except that the sealing film Q obtained above was used inplace of the sealing film A. The results are shown in Table 5.

Comparative Example 7 Preparation of a Sealing Film

Cyclohexanone was added to a composition consisting of 4.72 parts bymass of an epoxy group-comprising acrylic rubber (trade name:HTR-860P-3DR, with a weight-average molecular weight of 800,000 and a Tgof −7° C., manufactured by Nagase ChemteX Corporation) as thehigh-molecular-weight component (a1), 47.04 parts by mass of a bisphenolF epoxy resin (trade name: YD-8170C, with an epoxy equivalent of 160,manufactured by Tohto Kasei Co., Ltd.) and 47.32 parts by mass of aphenol/p-xylylene glycol dimethyl ether copolymer resin (trade name:Mirex XLC-LL, with a hydroxyl equivalent of 174, manufactured by MitsuiChemicals, Inc.) as the thermosetting component (a2), and 0.5 part bymass of 1-cyano-1-phenyl imidazole (trade name: Curezole 2PZ-CN,manufactured by Shikoku Chemicals Corporation). Then, the mixture wasmixed under stirring and then vacuum-degassed to give a varnish withabout 60 mass % nonvolatile content (abbreviated hereinafter as NV).

The varnish obtained above was applied onto a substrate layer (tradename: Purex A31B, a release agent-treated polyethylene terephthalatefilm with a film thickness of 38 μm, manufactured by Teijin DuPont FilmsJapan Limited) and then dried by heating at 90° C. for 5 minutes andthen at 140° C. for 5 minutes to form a coating film of 188 μm inthickness, whereby a film R in a B-stage state (thickness of the resinlayer: 150 μm) was obtained.

<Evaluation of the Sealing Film (Resin Layer)>

The sealing film R obtained above was evaluated in the same manner as inExample 1. The results are collectively shown in Table 5.

<Preparation and Evaluation of a Semiconductor Device>

A semiconductor device was prepared and evaluated in the same manner asin Example 1 except that the sealing film R obtained above was used inplace of the sealing film A. The results are shown in Table 5.

TABLE 5 Comparative Comparative Comparative Comparative Example 4Example 5 Example 6 Example 7 Compsition a1 HTR860*1 33.4 33.4 4.72 4.72a2 YD8170C*2 33.6 33.6 47.04 47.04 XLC-LL*3 33.8 33.8 47.32 47.32YDCN703*4 0 0 0 0 LF4871*5 0 0 0 0 B TFC-24*6 0 0 0 0 TFC-12*7 0 0 0 0FB-35*8 0 0 0 0 SO-C2*9 152.6 152.6 0 0 C FP308*10 2.5 2.5 2.5 0 Others2PZ-CN*11 0.5 0.5 0.5 0.5 SH6040*12 0 0 0 0 A189*13 0 0 0 0 A1160*14 0 00 0 Film making conditions 1 bath  90/5 90/15  90/5  90/5 (Temp. (°C.)/Time(min)) 2 bath 140/5 140/15  140/5 140/5 a1/(a1 + a2) 5~85 33.1333.13 4.76 4.76 A 10 10 10 10 10 B 5~300 15.14 15.14 0 0 C 0.01~10 0.250.25 0.25 0 B-stage film 0 P Q R Film Flow (μm) 140 100 1900 1900characteristics Film viscosity (50° C.) 120,000 150,000 40,000 70,000(Pa · s) (100° C.) 20,000 50,000 9,000 18,000 Strage elastic modulus6,000 6,000 2,000 6,000 (35° C., MPa) Tg (° C.) 165 165 165 165 Thermaldecomposition 380 380 360 380 onset point (° C.) Embedding property x xx∘ ∘ Laser marking ∘ 100 100 0 0 visibility Δ 0 0 50 0 x 0 0 50 100Evaluation of semiconductor device   5/10 10/10  10/10   0/10 *1 to 14:The same as in Table 1.

INDUSTRIAL APPLICABILITY

The sealing film of the present invention has protective functions andfilling properties, is used in protecting and filling a semiconductorchip, is excellent in filling properties, adhesiveness and shaperetention by regulating fluidity at the time of filling, and is thusapplicable to various semiconductor devices, electronic parts etc.

The invention claimed is:
 1. A semiconductor device comprising a circuitsubstrate and a semiconductor element on the circuit substrate, whereinthe semiconductor element comprises protruded electrodes sealed with asealing film, wherein the sealing film comprises a resin layercontaining the following (A), (B) and (C) and having a flow within therange of 150 to 1800 μm at 80° C.: (A) a resin component containing (a1)a high-molecular-weight component comprising crosslinking functionalgroups and having a weight-average molecular weight of 100,000 or moreand a Tg within the range of −50 to 50° C. and (a2) a thermosettingcomponent comprising an epoxy resin as a main component, (B) a fillerhaving an average particle size within the range of 1 to 30 μm, and (C)a colorant, and wherein the sealing film contains 1 to 300 parts by massof the filler (B) and 0.01 to 10 parts by mass of the colorant (C),based on 10 parts by mass of the resin component (A) containing 5 to 85%by mass of the high-molecular-weight component (a1) and 15 to 95% bymass of the thermosetting component (a2).
 2. The semiconductor devicesaccording to claim 1, wherein the resin component (A) contains 5 to 80%by mass of the high-molecular-weight component (a1) and 15 to 85% bymass of the thermosetting component (a2).
 3. The semiconductor devicesfilm according to claim 2, wherein the sealing film contains 1 to 300parts by mass of the filler (B) and 0.01 to 10 parts by mass of thecolorant (C), based on 10 parts by mass of the resin component (A). 4.The semiconductor device according to claim 1, wherein the filler (B) isan inorganic filler.
 5. The semiconductor device according to claim 1,wherein the colorant (C) is a non-white colorant.
 6. The semiconductordevice according to claim 1, wherein the storage elastic modulus of theresin layer at 35° C. after curing at 170° C. for 1 hour is within therange of 100 to 20000 MPa.
 7. The semiconductor device according toclaim 1, wherein said flow is within a range of 400 to 1400 μm.
 8. Thesemiconductor device according to claim 1, wherein said resin layer hasa viscosity within the range of 10,000 to 100,000 Pa·s in a B-stagestate at 50 to 100° C. in thermosetting viscoelasticity measurement. 9.The semiconductor device according to claim 1, further comprising solderballs mounted on the protruded electrodes.
 10. A semiconductor devicecomprising a circuit substrate and a semiconductor element on thecircuit substrate, wherein the semiconductor element comprises protrudedelectrodes sealed with a sealing film, wherein the sealing filmcomprises a resin layer containing the following (A), (B) and (C) andhaving a viscosity within the range of 10000 to 100000 Pa·s in a B-stagestate at 50 to 100° C. in thermosetting viscoelasticity measurement: (A)a resin component containing (a1) a high-molecular-weight componentcomprising crosslinking functional groups and having a weight-averagemolecular weight of 100,000 or more and a Tg within the range of −50 to50° C. and (a2) a thermosetting component comprising an epoxy resin as amain component, (B) a filler having an average particle size within therange of 1 to 30 μm, and (C) a colorant, and wherein the sealing filmcontains 1 to 300 parts by mass of the filler (B) and 0.01 to 10 partsby mass of the colorant (C), based on 10 parts by mass of the resincomponent (A) containing 5 to 85% by mass of the high-molecular-weightcomponent (a1) and 15 to 95% by mass of the thermosetting component(a2).
 11. The semiconductor device according to claim 10, wherein thesealing film contains 1 to 300 parts by mass of the filler (B) and 0.01to 10 parts by mass of the colorant (C), based on 10 parts by mass ofthe resin component (A).
 12. The semiconductor device according to claim10, wherein the filler (B) is an inorganic filler.
 13. The semiconductordevice according to claim 2, wherein the colorant (C) is a non-whitecolorant.
 14. The semiconductor device according to claim 10, whereinthe storage elastic modulus of the resin layer at 35° C. after curing at170° C. for 1 hour is within the range of 100 to 20000 MPa.
 15. Thesemiconductor device according to claim 10, wherein said viscosity iswithin the range of 15000 to 90000 Pa·s in a B-stage state at 50 to 100°C. in thermosetting viscoelasticity measurement.
 16. The semiconductordevice according to claim 10, further comprising solder balls mounted onthe protruded electrodes.